hall mobility
英 [hɔːl məʊˈbɪləti]
美 [hɔːl moʊˈbɪləti]
网络 霍尔迁移率; 霍耳迁移率
双语例句
- Extrinsic semiconductor single crystals& measurement of Hall mobility and Hall coefficient
GB/T4326-1984非本征半导体单晶霍尔迁移率和霍尔系数测量方法 - We conclude that the extremum factor of the Hall coefficient is a good measure of the Hall characteristic, and it can be also used to determine the mobility ratio of carriers in semiconductors.
作者提出了采用霍尔极值因数来表征不同半导体材料的霍尔特性及测量载流子迁移率之比值的新方法。 - The effect of substrata temperature on conduction type, carrier concentration, Hall mobility, and resistivity of ZnO thin films have been investigated.
具体研究了衬底温度对ZnO薄膜p型掺杂的影响。 - The microstructure of the films was determined by X-ray diffraction. The electrical properties of the films such as resistivity, Hall mobility and carrier concentration were measured.
由X射线衍射分析试样结构随温度的变化，并测试了样品的方块电阻、电阻率、Hall迁移率、载流子浓度等电性能和膜层的可见光透过率。 - Modeling and Analysis of Temperature Dependence of the Carrier Concentration and Hall Mobility in N-type 4H-SiC
N型4H-SiC中载流子密度和霍耳迁移率的模拟及研究 - Here the conductance, carrier concentration and hall mobility ect parameters of Er doped CdTe films have been given.
讨论了不同Er离子注入量对硅基底上沉积的CdTe薄膜结构和光电性能的影响，并具体给出了掺杂CdTe多晶薄膜的电导、载流子浓度及迁移率等参数值。 - Hall mobility of zns_x se_ ( 1-x) single crystals
ZnSxSe（1-x）单晶的霍尔迁移率 - Analytical model for the electron Hall mobility in the n-type 4H-SiC
n型4H-SiC电子霍耳迁移率解析模型 - In this paper, a new semiempirical method for the compositional dependence analysis of electron Hall mobility in ternary semiconductor alloys is presented.
本文提出一种分析三元半导体合金霍尔迁移率随组分变化的半经验方法。 - Effect of Bias Voltage on Carrier Concentration and Hall Mobility in ITO Films
偏压对溅射ITO膜载流子浓度和迁移率的影响 - PL spectra and Hall mobility measurement indicate that ICP etching will introduce damages to GaN, leading to increase of surface roughness and deterioration of electrical and optical properties.
GaN薄膜的PL谱和霍尔迁移率测试结果表明，ICP刻蚀会对被刻蚀GaN材料表面带来很大损伤，表面粗糙度增加，材料的电学和光学特性变差。 - The sheet resistance and Hall mobility, as well as concentration of carriers, were measured by four-probe technique and Hall effect measurement.
其薄层电阻、载流子迁移率及浓度分别由四探针法和霍尔效应法测定。 - However the electron Hall mobility is controlled by intervalley phonon deformation potential scattering when the temperature is higher.
高温区，电子霍耳迁移率则主要受谷间声子散射控制。 - Contactless Measurement of Minority Carrier Diffusion Length and Hall Mobility of GaAs and Al_xGa_ ( 1-x) As Epitaxial Layer
GaAs、AlxGa（1－x）As外延层少子扩散长度及霍耳迁移率的无接触测 - The Conductivity and Hall Mobility of Te doped InSb-NiSb Eutectic Composite
掺Te的InSb-NiSb共晶复合材料的电导率和霍耳迁移率 - Hall effect measurement is an important means for characterization of semiconductor, which can be used to measure the conduction type, carrier concentration, mobility and so on. Therefore, it is extensively employed in research and industry.
霍尔效应测试是半导体测试技术中一种重要的测试手段，用于测量半导体材料的导电类型、载流子浓度、载流子迁移率等电学参数，在研究和生产中有广泛的应用。 - The crystallite sizes become larger and the crystallinity of the resulting films improves with the increasing of the sputtering time and the film thickness. These decrease the scattering by the grain boundaries and enhance the carrier lifetime and hall mobility, leading to the decrease of the resistivity.
随着溅射时间和膜厚的增加，薄膜的晶化程度逐渐提高，晶粒也逐渐长大，晶粒的长大弱化了晶粒间界散射，提高了载流子的寿命和迁移率，使得薄膜的电阻率降低。 - The multilayer conductivity is enhanced by increased Ag layer thickness, but the Hall mobility reduces at the intial growth stage of Ag layer, because of the interface scattering.
薄膜导电性随Ag层厚度增加而增强，但在Ag层生长初期，霍尔迁移率由于受界面散射影响而减小。 - As the temperature changes from 100 K to 300 K, the Hall coefficient and the resistivity of the films decrease, while the carrier density increase and Hall mobility shows no great changes.
对同一条件下制备得到的氮化铜纳米薄膜而言，在温度从100K到300K的变化区间，薄膜的霍尔系数和霍尔电阻率降低，载流子浓度增加而霍尔迁移率基本保持不变。 - As substrate temperature was increased, thin film resistivity decreased sharply and carrier concentration and hall mobility increased prominently.
衬底温度增加，薄膜的电阻率急剧降低，迁移率和载流子浓度显著增加。 - GZO film has strong magnetoresistance. The reluctance increased with the increases of magnetic field strength and Hall mobility.
GZO薄膜具有较强的磁阻效应，磁阻随磁场强度和薄膜迁移率的增大而增大。